ss150ta60110, ss150tc60110, SS150TI60110 v rrm = 600 v i f(avg) = 10 a c j = 120 pf symbol parameter per diode test conditions maximum ratings v rrm repetitive peak reverse voltage 600 v v rsm repetitive surge reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current t j = 175 c 10 a i frm repetitive peak forward surge current t c = 25 c, t p = 10 ms half sine wave 67 a i fsm non - repetitive peak forward surge current t c = 25 c, t p = 10 s pulse 250 a t vj operating virtual junction temperature - 55 to +175 c t stg storage temperature - 55 to +175 c p tot t c = 25 c (30 w/ per diode) 90 w symbol parameter test conditions characteristic values t j = 25c unless otherwise specified typ. max. units v f forward voltage i f = 5 a, t j = 25 c t j = 175 c 1.7 2.2 2 2.5 v i r reverse current v r = 600 v, t j = 25 c t j = 175 c 10 20 50 200 a c j junction capacitance f = 1 mhz, v r = 0 v v r = 200 v v r = 600 v 600 130 120 pf q c capacitive charge v r = 600 v 72 nc r thjc thermal resistance 1.7 c/w t l lead soldering temperature 1.6 mm (0.063 in) from case for 10 s 300 c isolation pin to substrate pin to pin >1800 >1500 v rms weight 2 g features ? 600 v sic schottky diode ? surface mount package ? zero reverse recovery ? zero forward recovery ? high frequency operation ? temperature independent behavior ? positive temperature coefficient for v f applications ? mhz switch mode power supplies ? high frequency converters ? resonant converters ? rectifier circuits silicon carbide schottky diode part number v rrm (v) i f(avg) (a) configuration ss150ta60110 600 10 triple common anode ss150tc60110 600 10 triple common cathode SS150TI60110 600 10 triple independent a = anode c = cathode triple cathode (tc) triple independent (ti) triple anode (ta)
ss150ta60110, ss150tc60110, SS150TI60110 fig. 1 fig. 2 fig. 3 fig. 4 fig. 5 fig. 6 t j = 25c t j = 175c 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 i f (a) v f (v) forward voltage vs. current 0 0.2 0.4 0.6 0.8 1 1.2 -50 -30 -10 10 30 50 70 90 normalized value temperature ( c) forward voltage vs. temperature i f = 10 a 0 1e-10 2e-10 3e-10 4e-10 5e-10 6e-10 7e-10 0 100 200 300 400 500 600 capacitance (f) v r (v) capacitance vs. reverse voltage 0 1e-08 2e-08 3e-08 4e-08 5e-08 6e-08 7e-08 8e-08 0 100 200 300 400 500 600 charge (c) v r (v) q charge vs. reverse voltage 0.01 0.1 1 -50 0 50 100 leakage current (a) temperature ( c) leakage current vs. temperature v r = 600 v 0.0001 0.001 0.01 0.1 1 0 200 400 600 leakage current (a) v r (v) leakage current vs. reverse voltage
ss150ta60110, ss150tc60110, SS150TI60110 dcb C direct copper bond under nickel plate on an aluminum nitride substrate, electrically isolated from any pin. fig. 7 package diagram ? 2015 ixys rf an ixys company 1609 oakridge dr., suite 100 fort collins, co usa 80525 970 - 493 - 1901 fax: 970 - 232 - 3025 email: sales@ixyscolorado.com web: http://www.ixyscolorado.com a3 a2 a1 c3 c1 c2 side view top view bottom view end view
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